Modulation-doped growth of mosaic graphene with single-crystalline p-n junctions for efficient photocurrent generation.

Abstract:

:Device applications of graphene such as ultrafast transistors and photodetectors benefit from the combination of both high-quality p- and n-doped components prepared in a large-scale manner with spatial control and seamless connection. Here we develop a well-controlled chemical vapour deposition process for direct growth of mosaic graphene. Mosaic graphene is produced in large-area monolayers with spatially modulated, stable and uniform doping, and shows considerably high room temperature carrier mobility of ~5,000 cm(2) V(-1) s(-1) in intrinsic portion and ~2,500 cm(2) V(-1) s(-1) in nitrogen-doped portion. The unchanged crystalline registry during modulation doping indicates the single-crystalline nature of p-n junctions. Efficient hot carrier-assisted photocurrent was generated by laser excitation at the junction under ambient conditions. This study provides a facile avenue for large-scale synthesis of single-crystalline graphene p-n junctions, allowing for batch fabrication and integration of high-efficiency optoelectronic and electronic devices within the atomically thin film.

journal_name

Nat Commun

journal_title

Nature communications

authors

Yan K,Wu D,Peng H,Jin L,Fu Q,Bao X,Liu Z

doi

10.1038/ncomms2286

subject

Has Abstract

pub_date

2012-01-01 00:00:00

pages

1280

issn

2041-1723

pii

ncomms2286

journal_volume

3

pub_type

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