Abstract:
:We investigated the heat dissipation in heterostructure field-effect transistors (HFETs) using microRaman measurement of the temperature in active AIGaN/GaN. By varying the gate structure, the heat dissipation through the gate was clearly revealed. The temperature increased to 120 °C at the flat gate device although the inserted gate increased to only 37 °C. Our results showed that the inserted gate structure reduced the self-heating effect by three times compared to the flat gate structure. Temperature mapping using micro-Raman measurement confirmed that the temperature of the near gate area was lower than that of the near drain area. This indicated that the inserted gate electrode structure effectively prohibited self-heating effects.
journal_name
J Nanosci Nanotechnoljournal_title
Journal of nanoscience and nanotechnologyauthors
Yoo J,Chang SK,Jung G,Kim K,Kim TS,Song JH,Cha HY,Han SWdoi
10.1166/jnn.2021.19491subject
Has Abstractpub_date
2021-11-01 00:00:00pages
5736-5741issue
11eissn
1533-4880issn
1533-4899journal_volume
21pub_type
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